Транзистор: N-MOSFET; 100В; 800мА; Idm: 5А; SOT23,TO236AB Технические параметры
- Case: TO236AB
- Channel kind: enhanced
- Drain current: 800mA
- Drain-source voltage: 100V
- Features of semiconductor devices: logic level
- Gate charge: 6.8нКл
- Manufacturer: NEXPERIA
- Mounting: SMD
- On-State Resistance: 1078mΩ
- Polarisation: unipolar
- Pulsed drain current: 5A
- Type of transistor: N-MOSFET