Транзистор: N-MOSFET; 30В; 3,5А; Idm: 22А; SOT23,TO236AB Технические параметры
- Case: TO236AB
- Channel kind: enhanced
- Drain current: 3.5A
- Drain-source voltage: 30V
- Features of semiconductor devices: logic level
- Gate charge: 18нКл
- Manufacturer: NEXPERIA
- Mounting: SMD
- On-State Resistance: 39mΩ
- Polarisation: unipolar
- Pulsed drain current: 22A
- Type of transistor: N-MOSFET