Транзистор: N-MOSFET; 60В; 900мА; Idm: 5,9А; SOT23,TO236AB Технические параметры
- Case: TO236AB
- Channel kind: enhanced
- Drain current: 900mA
- Drain-source voltage: 60V
- Features of semiconductor devices: logic level
- Gate charge: 4.8нКл
- Manufacturer: NEXPERIA
- Mounting: SMD
- On-State Resistance: 441mΩ
- Polarisation: unipolar
- Pulsed drain current: 5.9A
- Type of transistor: N-MOSFET