Транзистор: N-MOSFET; 30В; 3,6А; Idm: 24А; SOT23,TO236AB Технические параметры
- Case: TO236AB
- Channel kind: enhanced
- Drain current: 3.6A
- Drain-source voltage: 30V
- Features of semiconductor devices: ESD protected gate
- Gate charge: 18.6нКл
- Manufacturer: NEXPERIA
- Mounting: SMD
- On-State Resistance: 37mΩ
- Polarisation: unipolar
- Pulsed drain current: 24A
- Type of transistor: N-MOSFET