Транзистор: N-MOSFET; 40В; 1,5А; Idm: 8А; SOT23,TO236AB Технические параметры
- Case: TO236AB
- Channel kind: enhanced
- Drain current: 1.5A
- Drain-source voltage: 40V
- Features of semiconductor devices: logic level
- Gate charge: 3.6нКл
- Manufacturer: NEXPERIA
- Mounting: SMD
- On-State Resistance: 233mΩ
- Polarisation: unipolar
- Pulsed drain current: 8A
- Type of transistor: N-MOSFET