Транзистор: N-MOSFET; 60В; 1,3А; Idm: 8,3А; SOT23,TO236AB Технические параметры
- Case: TO236AB
- Channel kind: enhanced
- Drain current: 1.3A
- Drain-source voltage: 60V
- Features of semiconductor devices: logic level
- Gate charge: 7.4нКл
- Manufacturer: NEXPERIA
- Mounting: SMD
- On-State Resistance: 246mΩ
- Polarisation: unipolar
- Pulsed drain current: 8.3A
- Type of transistor: N-MOSFET