Транзистор: N-MOSFET; 30В; 3А; Idm: 12А; SOT23,TO236AB Технические параметры
- Case: TO236AB
- Channel kind: enhanced
- Drain current: 3A
- Drain-source voltage: 30V
- Features of semiconductor devices: logic level
- Gate charge: 5.5нКл
- Manufacturer: NEXPERIA
- Mounting: SMD
- On-State Resistance: 118mΩ
- Polarisation: unipolar
- Pulsed drain current: 12A
- Type of transistor: N-MOSFET