Транзистор: N-MOSFET; 100В; 700мА; Idm: 4,4А; SOT223,SC73 Технические параметры
- Case: SOT223
- Channel kind: enhanced
- Drain current: 700mA
- Drain-source voltage: 100V
- Features of semiconductor devices: logic level
- Gate charge: 4.4нКл
- Manufacturer: NEXPERIA
- Mounting: SMD
- On-State Resistance: 1.62Ω
- Polarisation: unipolar
- Pulsed drain current: 4.4A
- Type of transistor: N-MOSFET