Транзистор: N-MOSFET; 60В; 1,9А; Idm: 12А; 1,6Вт Технические параметры
- Case: SOT1220
- Channel kind: enhanced
- Drain current: 1.9A
- Drain-source voltage: 60V
- Gate charge: 9.2нКл
- Manufacturer: NEXPERIA
- Mounting: SMD
- On-State Resistance: 175mΩ
- Polarisation: unipolar
- Power dissipation: 1.6W
- Pulsed drain current: 12A
- Type of transistor: N-MOSFET