Транзистор: N-MOSFET; 60В; 2,5А; Idm: 16А; 1,65Вт Технические параметры
- Case: SOT1220
- Channel kind: enhanced
- Drain current: 2.5A
- Drain-source voltage: 60V
- Features of semiconductor devices: ESD protected gate
- Gate charge: 12нКл
- Manufacturer: NEXPERIA
- Mounting: SMD
- On-State Resistance: 106mΩ
- Polarisation: unipolar
- Power dissipation: 1.65W
- Pulsed drain current: 16A
- Type of transistor: N-MOSFET