Транзистор: N-MOSFET; 30В; 500мА; Idm: 4А Технические параметры
- Case: TSSOP6
- Channel kind: enhanced
- Drain current: 500mA
- Drain-source voltage: 30V
- Features of semiconductor devices: ESD protected gate
- Gate charge: 1.65нКл
- Manufacturer: NEXPERIA
- Mounting: SMD
- On-State Resistance: 411mΩ
- Polarisation: unipolar
- Pulsed drain current: 4A
- Type of transistor: N-MOSFET