Транзистор: N-MOSFET; 20В; 1,3А; Idm: 8А; SC70,SOT323 Технические параметры
- Case: SOT323
- Channel kind: enhanced
- Drain current: 1.3A
- Drain-source voltage: 20V
- Features of semiconductor devices: ESD protected gate
- Gate charge: 5.85нКл
- Manufacturer: NEXPERIA
- Mounting: SMD
- On-State Resistance: 96mΩ
- Polarisation: unipolar
- Pulsed drain current: 8A
- Type of transistor: N-MOSFET