Транзистор: N-MOSFET; полевой; RF; 65В; 2,5А; 31,7Вт; PowerSO10RF Технические параметры
- Case: PowerSO10RF
- Channel kind: enhanced
- Drain current: 2.5A
- Drain-source voltage: 65V
- Electrical mounting: SMT
- Frequency: 945MHz
- Gain: 16.5dB
- Gate-source voltage: ±20V
- Kind of package: tube
- Manufacturer: STM
- Output power: 18W
- Polarisation: unipolar
- Power dissipation: 31.7W
- Transistor kind: RF
- Type of transistor: N-MOSFET