Транзистор: N-MOSFET; полевой; 60В; 150мА; Idm: 800мА Технические параметры
- Case: TSSOP6
- Channel kind: enhanced
- Drain current: 150mA
- Drain-source voltage: 60V
- Features of semiconductor devices: logic level
- Gate charge: 1нКл
- Manufacturer: NEXPERIA
- Mounting: SMD
- On-State Resistance: 5.7Ω
- Polarisation: unipolar
- Pulsed drain current: 800mA
- Type of transistor: N-MOSFET