Транзистор: N-MOSFET; полевой; 60В; 170мА; Idm: 900мА Технические параметры
- Case: TO236AB
- Channel kind: enhanced
- Drain current: 170mA
- Drain-source voltage: 60V
- Features of semiconductor devices: logic level
- Gate charge: 1нКл
- Manufacturer: NEXPERIA
- Mounting: SMD
- On-State Resistance: 5.7Ω
- Polarisation: unipolar
- Pulsed drain current: 900mA
- Type of transistor: N-MOSFET