Транзистор: N-MOSFET; 60В; 120мА; Idm: 760мА; SOT23,TO236AB Технические параметры
- Case: TO236AB
- Channel kind: enhanced
- Drain current: 120mA
- Drain-source voltage: 60V
- Features of semiconductor devices: logic level
- Gate charge: 0.43нКл
- Manufacturer: NEXPERIA
- Mounting: SMD
- On-State Resistance: 9.2Ω
- Polarisation: unipolar
- Pulsed drain current: 760mA
- Type of transistor: N-MOSFET