Транзистор: N-MOSFET; полевой; 80В; 20А; 100Вт; SO8 Технические параметры
- Case: SO8
- Channel kind: enhanced
- Drain current: 20A
- Drain-source voltage: 80V
- Gate-source voltage: ±20V
- Manufacturer: ON SEMICONDUCTOR
- Mounting: SMD
- On-State Resistance: 2.1mΩ
- Polarisation: unipolar
- Power dissipation: 100W
- Type of transistor: N-MOSFET