Транзистор: N-MOSFET; полевой; 60В; 203А; 100Вт; DFN5x6 Технические параметры
- Case: DFN5x6
- Channel kind: enhanced
- Drain current: 203A
- Drain-source voltage: 60V
- Gate-source voltage: ±20V
- Manufacturer: ON SEMICONDUCTOR
- Mounting: SMD
- On-State Resistance: 1.2mΩ
- Polarisation: unipolar
- Power dissipation: 100W
- Type of transistor: N-MOSFET