Транзистор: N-MOSFET; полевой; 40В; 52А; 25Вт; DFN8 5.0x6.0мм Технические параметры
- Case: DFN8 5.0x6.0mm
- Channel kind: enhanced
- Drain current: 52A
- Drain-source voltage: 40V
- Gate-source voltage: ±20V
- Manufacturer: ON SEMICONDUCTOR
- Mounting: SMD
- On-State Resistance: 4.7mΩ
- Polarisation: unipolar
- Power dissipation: 25W
- Type of transistor: N-MOSFET