Транзистор: N-MOSFET; полевой; 60В; 12А; 12Вт; DFN8 5.0x6.0мм Технические параметры
- Case: DFN8 5.0x6.0mm
- Channel kind: enhanced
- Drain current: 12A
- Drain-source voltage: 60V
- Gate-source voltage: ±20V
- Manufacturer: ON SEMICONDUCTOR
- Mounting: SMD
- On-State Resistance: 39mΩ
- Polarisation: unipolar
- Power dissipation: 12W
- Type of transistor: N-MOSFET