Транзистор: N-MOSFET; полевой; 20В; 2,6А; 0,47Вт; SOT23 Технические параметры
- Case: SOT23
- Channel kind: enhanced
- Continuous Drain Current (Id): 3.6A
- Drain current: 2.6A
- Drain-source voltage: 20V
- Drain-Source Voltage (Vds): 20V
- Fall Time: 4.67µs
- Gate-source voltage: ±8V
- Gate-Source Voltage: 8V
- Height Units: 3
- Manufacturer: ON SEMICONDUCTOR
- Mounting: SMD
- Mounting Type: SMD
- MSL: Level-1
- ON Resistance (Rds(on)): 55mΩ
- On-State Resistance: 24mΩ
- Operating Temperature Max.: 150°C
- Operating Temperature Min.: -55°C
- Package Type: SOT-23
- Packaging: Tape & Reel
- Phases: Single
- Polarisation: unipolar
- Power dissipation: 0.47W
- Power Dissipation (Pd): 470mW
- Reflow Temperature Max.: 260°C
- Rise Time: 14ns
- Transistor Polarity: N-Channel
- Turn-OFF Delay Time: 420ns
- Turn-ON Delay Time: 7ns
- Type of transistor: N-MOSFET