Транзистор: N-MOSFET; полевой; 60В; 35А; 23Вт; DFN5x6 Технические параметры
- Case: DFN5x6
- Channel kind: enhanced
- Drain current: 35A
- Drain-source voltage: 60V
- Gate-source voltage: ±20V
- Manufacturer: ON SEMICONDUCTOR
- Mounting: SMD
- On-State Resistance: 9.2mΩ
- Polarisation: unipolar
- Power dissipation: 23W
- Type of transistor: N-MOSFET