Транзистор: N-MOSFET; полевой; 20В; 5,5А; 2Вт; SO8 Технические параметры
- Case: SO8
- Channel kind: enhanced
- Drain current: 5.5A
- Drain-source voltage: 20V
- Gate-source voltage: ±12V
- Manufacturer: ON SEMICONDUCTOR
- Mounting: SMD
- On-State Resistance: 35mΩ
- Polarisation: unipolar
- Power dissipation: 2W
- Type of transistor: N-MOSFET