Транзистор: N-MOSFET; полевой; 30В; 5,3А; 1,7Вт; uDFN6 Технические параметры
- Case: uDFN6
- Channel kind: enhanced
- Drain current: 5.3A
- Drain-source voltage: 30V
- Gate-source voltage: ±12V
- Manufacturer: ON SEMICONDUCTOR
- Mounting: SMD
- On-State Resistance: 21mΩ
- Polarisation: unipolar
- Power dissipation: 1.7W
- Type of transistor: N-MOSFET