Транзистор: N-MOSFET; полевой; 20В; 0,185А; 0,44Вт; SOT723 Технические параметры
- Case: SOT723
- Channel kind: enhanced
- Drain current: 0.185A
- Drain-source voltage: 20V
- Features of semiconductor devices: ESD protected gate
- Gate-source voltage: ±10V
- Manufacturer: ON SEMICONDUCTOR
- Mounting: SMD
- On-State Resistance: 3.4Ω
- Polarisation: unipolar
- Power dissipation: 0.44W
- Type of transistor: N-MOSFET