Транзистор: N-MOSFET; полевой; 30В; 1,1А; 0,5Вт; SuperSOT-3 Технические параметры
- Case: SuperSOT-3
- Channel kind: enhanced
- Drain current: 1.1A
- Drain-source voltage: 30V
- Gate-source voltage: ±20V
- Manufacturer: ON SEMICONDUCTOR
- Mounting: SMD
- On-State Resistance: 370mΩ
- Polarisation: unipolar
- Power dissipation: 0.5W
- Type of transistor: N-MOSFET