Транзистор: N-MOSFET x2; Polar3™; полевой; 500В; 30А; Idm: 150А Технические параметры
- Case: SMPD
- Channel kind: enhanced
- Drain current: 30A
- Drain-source voltage: 500V
- Gate charge: 96нКл
- Gate-source voltage: ±30V
- Manufacturer: IXYS
- Mounting: SMD
- On-State Resistance: 120mΩ
- Polarisation: unipolar
- Power dissipation: 320W
- Pulsed drain current: 150A
- Reverse recovery time: 250ns
- Technology: Polar3™
- Type of transistor: N-MOSFET x2