Транзистор: N-MOSFET; GigaMOS™; полевой; 40В; 600А; Idm: 2кА; 830Вт Технические параметры
- Case: SMPD
- Channel kind: enhanced
- Continuous Drain Current (Id): 600A
- Drain current: 600A
- Drain-source voltage: 40V
- Drain-Source Voltage (Vds): 40V
- Fall Time: 250ns
- Gate charge: 590нКл
- Gate-Source Voltage: 20V
- Gate-source voltage: ±20V
- Manufacturer: IXYS
- Mounting: SMD
- Mounting Type: SMD
- ON Resistance (Rds(on)): 1.3mΩ
- On-State Resistance: 1.3mΩ
- Operating Temperature Max.: 175°C
- Operating Temperature Min.: -55°C
- Package Type: SMPD
- Packaging: Tube
- Phases: Single
- Polarisation: unipolar
- Ports: 24
- Power dissipation: 830W
- Power Dissipation (Pd): 830W
- Pulsed drain current: 2kA
- Reflow Temperature Max.: 260°C
- Reverse recovery time: 100ns
- Rise Time: 20ns
- Technology: TrenchT2™
- Transistor Polarity: N-Channel
- Turn-OFF Delay Time: 90ns
- Turn-ON Delay Time: 40ns
- Type of transistor: N-MOSFET
