Транзистор: N-MOSFET; GigaMOS™; полевой; 55В; 550А; Idm: 2кА; 830Вт Технические параметры
- Case: SMPD
- Channel kind: enhanced
- Drain current: 550A
- Drain-source voltage: 55V
- Gate charge: 595нКл
- Gate-source voltage: ±20V
- Manufacturer: IXYS
- Mounting: SMD
- On-State Resistance: 1.3mΩ
- Polarisation: unipolar
- Power dissipation: 830W
- Pulsed drain current: 2kA
- Reverse recovery time: 100ns
- Technology: TrenchT2™
- Type of transistor: N-MOSFET