Транзистор: N-MOSFET; Q3-Class; полевой; 1кВ; 30А; Idm: 110А; 694Вт Технические параметры
- Case: SMPD
- Channel kind: enhanced
- Drain current: 30A
- Drain-source voltage: 1kV
- Gate charge: 264нКл
- Gate-source voltage: ±30V
- Manufacturer: IXYS
- Mounting: SMD
- On-State Resistance: 245mΩ
- Polarisation: unipolar
- Power dissipation: 694W
- Pulsed drain current: 110A
- Reverse recovery time: 300ns
- Technology: Q3-Class
- Type of transistor: N-MOSFET