Транзистор: N-MOSFET; GigaMOS™; полевой; 100В; 334А; Idm: 1кА; 680Вт Технические параметры
- Case: SMPD
- Channel kind: enhanced
- Continuous Drain Current (Id): 334A
- Drain current: 334A
- Drain-source voltage: 100V
- Drain-Source Voltage (Vds): 100V
- Fall Time: 255ns
- Gate charge: 670нКл
- Gate-Source Voltage: 20V
- Gate-source voltage: ±20V
- Manufacturer: IXYS
- Mounting: SMD
- Mounting Type: SMD
- ON Resistance (Rds(on)): 2.6mΩ
- On-State Resistance: 2.6mΩ
- Operating Temperature Max.: 175°C
- Operating Temperature Min.: -55°C
- Package Type: SMPD
- Packaging: Tube
- Phases: Single
- Polarisation: unipolar
- Ports: 24
- Power dissipation: 680W
- Power Dissipation (Pd): 680W
- Pulsed drain current: 1kA
- Reflow Temperature Max.: 260°C
- Reverse recovery time: 140ns
- Rise Time: 155ns
- Technology: Trench™
- Transistor Polarity: N-Channel
- Turn-OFF Delay Time: 115ns
- Turn-ON Delay Time: 47ns
- Type of transistor: N-MOSFET
