Транзистор: N-MOSFET; Polar™; полевой; 1,1кВ; 24А; Idm: 100А; 500Вт Технические параметры
- Case: SMPD
- Channel kind: enhanced
- Drain current: 24A
- Drain-source voltage: 1.1kV
- Gate charge: 310нКл
- Gate-source voltage: ±30V
- Manufacturer: IXYS
- Mounting: SMD
- On-State Resistance: 290mΩ
- Polarisation: unipolar
- Power dissipation: 500W
- Pulsed drain current: 100A
- Reverse recovery time: 300ns
- Technology: Polar™
- Type of transistor: N-MOSFET