Транзистор: N-MOSFET; GigaMOS™; полевой; 150В; 235А; Idm: 900А; SMPD Технические параметры
- Case: SMPD
- Channel kind: enhanced
- Drain current: 235A
- Drain-source voltage: 150V
- Gate charge: 715нКл
- Gate-source voltage: ±20V
- Manufacturer: IXYS
- Mounting: SMD
- On-State Resistance: 4.4mΩ
- Polarisation: unipolar
- Power dissipation: 680W
- Pulsed drain current: 900A
- Reverse recovery time: 150ns
- Technology: TrenchT2™
- Type of transistor: N-MOSFET