Транзистор: N-MOSFET; Polar3™; полевой; 300В; 108А; Idm: 550А; 520Вт Технические параметры
- Case: SMPD
- Channel kind: enhanced
- Drain current: 108A
- Drain-source voltage: 300V
- Gate charge: 268нКл
- Gate-source voltage: ±20V
- Manufacturer: IXYS
- Mounting: SMD
- On-State Resistance: 16mΩ
- Polarisation: unipolar
- Power dissipation: 520W
- Pulsed drain current: 550A
- Reverse recovery time: 250ns
- Technology: Polar3™
- Type of transistor: N-MOSFET