Транзистор: N-MOSFET; GigaMOS™; полевой; 250В; 132А; Idm: 500А; SMPD Технические параметры
- Case: SMPD
- Channel kind: enhanced
- Drain current: 132A
- Drain-source voltage: 250V
- Gate charge: 364нКл
- Gate-source voltage: ±20V
- Manufacturer: IXYS
- Mounting: SMD
- On-State Resistance: 13mΩ
- Polarisation: unipolar
- Power dissipation: 570W
- Pulsed drain current: 500A
- Reverse recovery time: 200ns
- Technology: Trench™
- Type of transistor: N-MOSFET