Транзистор: N-MOSFET; Polar3™; полевой; 600В; 4А; Idm: 8А; 114Вт Технические параметры
- Case: TO252
- Channel kind: enhanced
- Drain current: 4A
- Drain-source voltage: 600V
- Gate charge: 6.9нКл
- Gate-source voltage: ±30V
- Manufacturer: IXYS
- Mounting: SMD
- On-State Resistance: 2.4Ω
- Polarisation: unipolar
- Power dissipation: 114W
- Pulsed drain current: 8A
- Reverse recovery time: 250ns
- Technology: Polar3™
- Type of transistor: N-MOSFET