Транзистор: N-MOSFET; полевой; 40В; 120А; Idm: 790А; 230Вт; D2PAK Технические параметры
- Case: D2PAK
- Channel kind: enhanced
- Continuous Drain Current (Id): 200A
- Drain current: 120A
- Drain-source voltage: 40V
- Drain-Source Voltage (Vds): 40V
- Fall Time: 49ns
- Features of semiconductor devices: logic level
- Gate charge: 75нКл
- Gate-source voltage: ±16V
- Gate-Source Voltage: 16V
- Height Units: 3
- Kind of package: reel
- Manufacturer: Infineon
- Mounting: SMD
- Mounting Type: SMD
- MSL: Level-1
- ON Resistance (Rds(on)): 3.1mΩ
- On-State Resistance: 3.1mΩ
- Operating Temperature Max.: 175°C
- Operating Temperature Min.: -55°C
- Package Type: TO-263
- Packaging: Tape & Reel
- Phases: Single
- Polarisation: unipolar
- Power dissipation: 230W
- Power Dissipation (Pd): 230W
- Pulsed drain current: 790A
- Reflow Temperature Max.: 300°C
- Rise Time: 180ns
- Technology: HEXFET®
- Transistor Polarity: N-Channel
- Turn-OFF Delay Time: 30ns
- Turn-ON Delay Time: 19ns
- Type of transistor: N-MOSFET
