Модуль; одиночный транзистор; 100В; 590А; Y3-DCB; Ugs: ±20В; 2,2кВт Технические параметры
- Case: Y3-DCB
- Channel kind: enhanced
- Drain current: 590A
- Drain-source voltage: 100V
- Electrical mounting: screw
- Features of semiconductor devices: Kelvin terminal
- Gate charge: 2µs
- Gate-source voltage: ±20V
- Manufacturer: IXYS
- Module type: transistor
- Mounting: screw
- On-State Resistance: 2.1mΩ
- Polarisation: unipolar
- Power dissipation: 2.2kW
- Pulsed drain current: 2.36kA
- Reverse recovery time: 300ns
- Semiconductor structure: single transistor
- Technology: HiPerFET™