Транзистор: N-MOSFET; полевой; 60В; 60А; Idm: 120А; 88Вт; DPAK Технические параметры
- Case: DPAK
- Channel kind: enhanced
- Drain current: 60A
- Drain-source voltage: 60V
- Features of semiconductor devices: ESD protected gate
- Gate charge: 60нКл
- Gate-source voltage: ±20V
- Manufacturer: Toshiba
- Mounting: SMD
- On-State Resistance: 6.4mΩ
- Polarisation: unipolar
- Power dissipation: 88W
- Pulsed drain current: 120A
- Type of transistor: N-MOSFET