Транзистор: IGBT; 2,5кВ; 13А; 150Вт; TO247 Технические параметры
- Case: TO247
- Collector current: 13A
- Collector-emitter voltage: 2.5kV
- Features of semiconductor devices: high voltage
- Gate - emitter voltage: ±20V
- Gate charge: 57нКл
- Manufacturer: IXYS
- Mounting: THT
- Power dissipation: 150W
- Pulsed collector current: 8A
- Topology: single transistor
- Turn-off time: 350ns
- Type of transistor: IGBT