Транзистор: N-MOSFET; X-Class; полевой; 850В; 8А; Idm: 16А; 200Вт Технические параметры
- Case: TO263HV
- Channel kind: enhanced
- Drain current: 8A
- Drain-source voltage: 850V
- Gate charge: 17нКл
- Gate-source voltage: ±30V
- Kind of package: tape
- Manufacturer: IXYS
- Mounting: SMD
- On-State Resistance: 850mΩ
- Polarisation: unipolar
- Power dissipation: 200W
- Pulsed drain current: 16A
- Reverse recovery time: 125ns
- Technology: X-Class
- Type of transistor: N-MOSFET
