Модуль; одиночный транзистор; 100В; 690А; Y3-DCB; Ugs: ±20В; 2,5кВт Технические параметры
- Case: Y3-DCB
- Channel kind: enhanced
- Drain current: 690A
- Drain-source voltage: 100V
- Electrical mounting: screw
- Features of semiconductor devices: Kelvin terminal
- Gate charge: 2.3µs
- Gate-source voltage: ±20V
- Manufacturer: IXYS
- Module type: transistor
- Mounting: screw
- On-State Resistance: 1.8mΩ
- Polarisation: unipolar
- Power dissipation: 2.5kW
- Pulsed drain current: 2.78kA
- Reverse recovery time: 300ns
- Semiconductor structure: single transistor
- Technology: HiPerFET™