Модуль; одиночный транзистор; 200В; 580А; Y3-Li; Ugs: ±20В; винтами Технические параметры
- Case: Y3-Li
- Channel kind: enhanced
- Drain current: 580A
- Drain-source voltage: 200V
- Electrical mounting: screw
- Features of semiconductor devices: Kelvin terminal
- Gate charge: 2.75µs
- Gate-source voltage: ±20V
- Manufacturer: IXYS
- Module type: transistor
- Mounting: screw
- On-State Resistance: 3.8mΩ
- Polarisation: unipolar
- Reverse recovery time: 300ns
- Semiconductor structure: single transistor
- Technology: HiPerFET™