Модуль; транзистор/транзистор; 300В; 220А; Y3-DCB; Ugs: ±20В Технические параметры
- Case: Y3-DCB
- Drain current: 220A
- Drain-source voltage: 300V
- Electrical mounting: screw
- Gate-source voltage: ±20V
- Manufacturer: IXYS
- Module type: transistor
- Mounting: screw
- On-State Resistance: 7.4mΩ
- Power dissipation: 1.5kW
- Pulsed drain current: 1.16kA
- Semiconductor structure: transistor/transistor
- Technology: HiPerFET™
- Topology: MOSFET half-bridge