Модуль; одиночный транзистор; 1,2кВ; 68А; SOT227B; винтами; SiC Технические параметры
- Case: SOT227B
- Channel kind: enhanced
- Drain current: 68A
- Drain-source voltage: 1.2kV
- Electrical mounting: screw
- Features of semiconductor devices: Kelvin terminal
- Gate charge: 161нКл
- Gate-source voltage: -5...20V
- Manufacturer: IXYS
- Module type: transistor
- Mounting: screw
- On-State Resistance: 34mΩ
- Polarisation: unipolar
- Reverse recovery time: 35ns
- Semiconductor structure: single transistor
- Technology: SiC