Транзистор: N-MOSFET; X3-Class; полевой; 250В; 150А; Idm: 300А Технические параметры
- Case: TO268HV
- Channel kind: enhanced
- Drain current: 150A
- Drain-source voltage: 250V
- Gate charge: 154нКл
- Gate-source voltage: ±20V
- Kind of package: tape
- Manufacturer: IXYS
- Mounting: SMD
- On-State Resistance: 9mΩ
- Polarisation: unipolar
- Power dissipation: 735W
- Pulsed drain current: 300A
- Reverse recovery time: 140ns
- Technology: X3-Class
- Type of transistor: N-MOSFET