Технические параметры
- Case: PowerSO8
- Channel kind: enhanced
- Drain current: 100A
- Drain-source voltage: 30V
- Features of semiconductor devices: logic level
- Gate charge: 70нКл
- Gate-source voltage: ±20V
- Kind of package: tape
- Manufacturer: NEXPERIA
- Mounting: SMD
- On-State Resistance: 1.15mΩ
- Polarisation: unipolar
- Power dissipation: 272W
- Type of transistor: N-MOSFET