Транзистор: N-MOSFET; SiC; полевой; 1,2кВ; 37А; SMPD-B Технические параметры
- Case: SMPD-B
- Channel kind: enhanced
- Drain current: 37A
- Drain-source voltage: 1.2kV
- Gate charge: 115нКл
- Kind of package: tube
- Manufacturer: IXYS
- Mounting: SMD
- On-State Resistance: 52mΩ
- Polarisation: unipolar
- Semiconductor structure: double series
- Technology: SiC
- Type of transistor: N-MOSFET