MOSFET, N-Channel, 650V, 15A, TO-220-3 Технические параметры
- Case: PG-TO220 FP
- Channel kind: enhanced
- Drain current: 9.4A
- Drain-source voltage: 650V
- Gate-source voltage: ±20V
- Manufacturer: Infineon
- Mounting: THT
- On-State Resistance: 280mΩ
- Polarisation: unipolar
- Power dissipation: 34W
- Pulsed drain current: 45A
- Technology: CoolMOS™
- Type of transistor: N-MOSFET
