Транзистор: IGBT; 420В; 25А; 150Вт; DPAK Технические параметры
- Case: DPAK
- Collector current: 25A
- Collector-emitter voltage: 420V
- Gate - emitter voltage: ±20V
- Gate charge: 29нКл
- Manufacturer: STM
- Mounting: SMD
- Power dissipation: 150W
- Pulsed collector current: 40A
- Type of transistor: IGBT